KIYOSU, Japan--(BUSINESS WIRE)--Toyoda Gosei Co., Ltd. (TOKYO: 7282), together with Osaka University, has succeeded in increasing the diameter of substrates for gallium nitride (GaN) power devices 1.

KIYOSU, Japan--(BUSINESS WIRE)--Toyoda Gosei’s (TOKYO:7282) technology to enhance GaN substrates has been verified to improve power device performance. An article confirming it was published in ...

- Contributing to realization and wide spread of implementation in vertical GaN power devices - GaN devices are attracting attention as next-generation devices that combine high device characteristics ...

TOKYO--(BUSINESS WIRE)-- Shin-Etsu Chemical Co., Ltd. (Head Office: Tokyo; President: Yasuhiko Saitoh) has determined that QST® (Qromis Substrate Technology) substrate*1 is an essential material for ...

The QSTTM substrate*1, a 300-mm GaN growth substrate that Shin-Etsu Chemical Co., Ltd. (Head Office: Tokyo; President: Yasuhiko Saitoh; hereinafter, “Shin-Etsu Chemical”) developed, has been adopted ...

Gallium nitride has become the de facto material in third-generation semiconductors. However, making GaN epi wafers in the quality you need and the thermal resistance you desire are challenges that ...

NexGen Power Systems Inc. is fabricating vertical power devices (vertical gallium nitride, or vertical GaN) using homoepitaxial GaN on GaN substrates. Vertical GaN devices are capable of switching at ...

Gallium nitride has long been on the horizon for a variety of uses in semiconductors, but implementing this on a commercial scale has been relatively slow due to a variety of technical hurdles. That ...

WASHINGTON - The U.S. Naval Research Laboratory's gallium nitride (GaN) wafers, also called large-area engineered substrates, can enable GaN to potentially be a displacement technology for silicon ...

The QST substrate, a 300-mm GaN growth substrate that Shin-Etsu Chemical Co. Ltd developed, has been adopted for the 300-mm GaN power device development program at imec, Belgium. Sample evaluation is ...