Nasdaq

ROHM Establishes Ultra-High-Speed Control IC Technology that Maximizes the Performance of GaN Devices

Santa Clara, CA and Kyoto, Japan, March 21, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today introduced ultra-high-speed control IC technology that maximizes the performance of GaN and other ...
Nasdaq

ROHM’s New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of GaN Devices

Santa Clara, CA and Kyoto, Japan, Nov. 08, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today introduced the new BD2311NVX-LB gate driver IC, optimized for GaN devices, which achieves gate drive speeds ...
Electronic Design

In Pursuit of Robust, Higher-Speed Power Designs with GaN

How GaN provides superior power designs compared to silicon. Why LLC resonant topologies are best. Traditional power transistors have long contributed to power losses (aka lower efficiency) in ...